ECTS - University of Pisa
Scheda programma d'esame
MICROELECTRONIC TECHNOLOGIES
FRANCESCO PIERI
Academic year2016/17
CourseELECTRONIC ENGINEERING
Code318II
Credits6
PeriodSemester 1
LanguageItalian

ModulesAreaTypeHoursTeacher(s)
TECNOLOGIE MICROELETTRONICHEING-INF/01LEZIONI60
ANDREA NANNINI unimap
FRANCESCO PIERI unimap
Programma non disponibile nella lingua selezionata
Learning outcomes
Knowledge
Upon successful completion of the course, the student will be able to demonstrate a general knowledge of the techniques used in the fabrication of integrated circuits (ICs) and will be able to describe a typical process sequence for CMOS fabrication. (S)he will possess a knowledge of the physics of the most common fabrication steps (thin film deposition, UV lithography, etching, etc.), a knowledge of the structure of the relative systems, and how each process is integrated in an IC fabrication sequence. (S)he will also be able to compare the different available technical options for each fabrication step, as well as the basic characterization techniques used in the microelectronics industry.
Assessment criteria of knowledge
In the final oral exam (30 minutes to 1 hour), the student will be required to present in an organized and clear manner the physical and technical aspects of the most important fabrication steps in a microelectronics fabrication sequence, by exposing the main options available to the process engineer and how each technical choice impacts the overall structure of the final integrated circuit. The proposed questions can take the form of the request to present a specific topic or of simple quantitative exercises pertaining to the course programme.

Methods:

  • Final oral exam

Further information:
Final oral exam: 100%

Teaching methods

Delivery: face to face

Learning activities:

  • attending lectures
  • individual study

Attendance: Advised

Teaching methods:

  • Lectures
Syllabus
Generalities on the fabrication of integrated circuits (ICs). The CMOS technology fabrication sequence. Growth of Silicon crystals, silicon wafer fabrication. Thermal oxidation of silicon, oxide growth models, thin oxides. Semiconductor doping: diffusion, ion implantation. Thin film deposition by Chemical Vapor Deposition (CVD), thermal evaporation, sputtering. Ultraviolet (UV) lithography. Thin film etching: wet etching, plasma etching. Vacuum systems. Clean rooms. Aspects of process integration: CMOS, Bipolar, MEMS technologies. IC Packaging. Characterization: measurement of resistivity, sheet resistance, doping profiles, contact resistance by electrical and non-electrical techniques.
Bibliography
J.D. Plummer, M.D. Deal, P.D. Griffin: Silicon VLSI Technology: Fundamentals, Practice, and Modeling D.K. Schroeder: Semiconductor Material and Device Characterization S. Wolf, R.N. Tauber: Silicon Processing for the VLSI Era, Vol. 1: Process Technology
Updated: 14/11/2016 17:27