The course includes an in-depth discussion of the scaling of CMOS devices (both constant-field and generalized scaling); an analysis of the main nonidealities, such as hot-electron effects, drain induced barrier lowering (DIBL), random distribution of dopants, limitations in the subthreshold slope and in the speed of propagation of signals, role of new materials and geometries in the new generations of devices; computation of conductance through a ballistic device; the concept of Coulomb blockade and its application to single-electron transistors; heterostructures based on compound semiconductors and their usage for HEMTs (high electron mobility transistors), quantum devices, and non-invasive charge detectors. A further set of topics is chosen according to the preferences expressed by the students, and typical selections are carbon electronics, quantum computing, molecular electronics, technological processes for the fabrication of nanodevices.