Academic year2016/17
CourseELECTRONIC ENGINEERING
Code098II
Credits9
PeriodSemester 2
LanguageItalian
| Modules | Area | Type | Hours | Teacher(s) |
| DISPOSITIVI ELETTRONICI | ING-INF/01 | LEZIONI | 90 | |
Programma non disponibile nella lingua selezionata
Knowledge
The student who successfully completes the course will have an advanced knowledge of the physical phenomena concerning the electrical transport in devices for modern electronics.
In particular, at the end of the course the student will have a deep knowledge
of the main physical equations that drive the electrical properties (current and voltages )of pn junctions, field effect and bipolar transistors.
The student will be able to face analytical and numerical solutions of the main
charge carrier transport features in semiconductors.
The student will also acquire the basic circuital models for electron devices,
to be applied to the solution of electronic circuits containing active components (transistors).
Assessment criteria of knowledge
The student must be able to apply the principles of electrical transport to
practical electron devices. In particular, the student must be able to solve the equations for current and voltages in pn junctions, bipolar transistors and field effect MOS transistors.
Methods:
Teaching methods
Delivery: face to face
Learning activities:
Attendance: Advised
Teaching methods:
Syllabus
The course, first of all, provides the basic principles of crystalline solids, band structure, donor and acceptor doping, electron and hole concentration. The drift-diffusion and continuity equation for electrons and holes are then introduced. The electrostatic equilibrium and currents in pn junctions is analyzed. Modeling of the diode for circuital representation is then given and simple rectifying circuits are discussed. Physical equations for charge carriers in bipolar junction transistors (BJT) are obtained, and current-voltage characteristics of BJT in different configurations are discussed. The main basic circuits for BJT biasing are illustrated. The course gives a deep insight of the metal-oxide-semiconductor (MOS) capacitor physics. Equations for current and voltages in long and short channel MOS field effect transistors (MOS-FET) are discussed and deeply analyzed.
Bibliography
S.M.Sze,
Physics of Semiconductor Devices
WILEY
R.S.Muller, T.I.Kamins,
Device Electronics for Integrated Circuits
J.Wiley and Sons.
B.G.Streetman,
Solid State Electronic Devices
Prentice-Hall International Editions.
Updated: 14/11/2016 17:27
